3A, 800V N-CHANNEL MOSFET

                                                                      Product：SVF3N80M/MJ/F/D/T

一、General Description

SVF3N80M/MJ/F/D/T  is  an  N-channel   enhancement  mode power MOS field effect transistor which is produced using Silanproprietary  F-CellTM structure VDMOS  technology.    The improved   planar  stripe   cell   and  the   improved   guard  ring terminal  have  been  especially   tailored  to  minimize  on-state resistance, provide  superior   switching performance,   and withstand high energy pulse in the avalanche and commutation mode.  
These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

二、 Features 

3A, 800V, RDS(on)(typ.)=3.8Ω@VGS=10V 
Low gate charge  
Low Crss 
Fast switching 
Improved dv/dt capability

三、NOMENCLATURE

四、ORDERING INFORMATION

五、Package/Order Information

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