2A, 600V N-CHANNEL MOSFET

                       Product：SVF2N60M/MJ/N/NF/F/T/D

一、General Description 

power MOS field effect transistor which is produced using SilanSVF2N60M/MJ/N/NF/F/T/D is an N-channel enhancement mode proprietary F-Cell    structure VDMOS technology. The improved planar  stripe  cell  and  the  improved  guard  ring  terminal  have been especially tailored to minimize on-state resistance, provide superior  switching   performance,  and   withstand   high  energy pulse in the avalanche and commutation modeThese devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers

二、 Features

2A,600V,RDS(on)(typ.)=3.7Ω@VGS=10V 

Low gate charge  
Low Crss
Fast switching

三、NOMENCLATURE

四、ORDERING INFORMATION

五、Package/Order Information

FREE HOT LINE:+86-400-788-7770

Tel:+86-769-81150556　　　 Mob:+86-18929103949 Ms Tang
Tel: +86-769-85638990　　　Mob:+86-18923224605  Ms Ye
Email: dgzm699@163.com      QQ:2485843216

Fax:+86-769-83351643

 

Head office:  No.8, Yanhe East Street, Ailingkan Village, Dalingshan Town,  Dongguan City, Guangdong Province, China

Foshan office: No.169 Rongqi Road,Ronggui Village,Shunde District,Foshan City,Guangdong Province,China

Shenzhen office:Baifuhui Industrial Park,Jianshedonglu Road,Longhua District,Shenzhen City,Guangdong Province,China

Zhongshan office:Shijihaoting,Longchang Road,Dongsheng Village,Zhongshan City,Guangdong Province,China

Hangzhou office:Jiangnanmoka,Wenyan Village,Xiaoshan District,Hangzhou City,Zhejiang Province,China

 

Office Website: www.topctc.com